Transistor MOSFET NCEP60T12A 

****PRONTA ENTREGA*****
Transistor MOSFET NCEP60T12A 
Código Fabricante: NCEP60T12A
Channel: *N*
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 67 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 680 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Fabricante:NCE
Invólucro:TO220
Embalagem: A granel
Código Interno: (GV-12)