TRANSISTOR MOSFET 2SJ174-CANAL *P*

TRANSISTOR MOSFET 2SJ174-CANAL *P*

Maximum Power Dissipation (Pd): 75 W

MaximumDrain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 125 nS

Drain-Source Capacitance (Cd): 990 pF

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: TO220AB

FABRICANTE: HITACHI

Código Interno= (GV-22)